Infineon HEXFET Type N-Channel MOSFET & Diode, 100 A, 30 V Enhancement, 8-Pin PQFN IRFH5300TRPBF

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Subtotal (1 pack of 10 units)*

Kr.123 25 

(exc. VAT)

Kr.154 06 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90Kr. 12,325Kr. 123,25
100 - 240Kr. 11,715Kr. 117,15
250 - 490Kr. 11,234Kr. 112,34
500 - 990Kr. 10,731Kr. 107,31
1000 +Kr. 9,976Kr. 99,76

*price indicative

Packaging Options:
RS Stock No.:
220-7484
Mfr. Part No.:
IRFH5300TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

50nC

Maximum Power Dissipation Pd

3.6W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Length

6mm

Height

0.9mm

Width

4.75 mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFH5300 is strong power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Logic level : Optimized for 5 V gate drive voltage

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