Infineon HEXFET Type N-Channel MOSFET, 265 A, 40 V PQFN

View all MOSFETs

Subtotal (1 reel of 4000 units)*

Kr.37 012 00 

(exc. VAT)

Kr.46 264 00 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 30. mars 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
4000 +Kr. 9,253Kr. 37 012,00

*price indicative

RS Stock No.:
257-5529
Mfr. Part No.:
IRFH7084TRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

265A

Maximum Drain Source Voltage Vds

40V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

1.25mΩ

Typical Gate Charge Qg @ Vgs

127nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

156W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Height

1.05mm

Standards/Approvals

RoHS

Length

6mm

Width

5 mm

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Industry standard surface-mount power package

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100 kHz

Softer body-diode compared to previous silicon generation

Wide portfolio available

Related links