Infineon HEXFET Type N-Channel MOSFET, 40 A, 20 V PQFN IRLHM620TRPBF

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Subtotal (1 pack of 5 units)*

Kr.74 93 

(exc. VAT)

Kr.93 66 

(inc. VAT)

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In Stock
  • 3 970 unit(s) ready to ship
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Units
Per unit
Per Pack*
5 - 45Kr. 14,986Kr. 74,93
50 - 120Kr. 13,50Kr. 67,50
125 - 245Kr. 12,63Kr. 63,15
250 - 495Kr. 9,746Kr. 48,73
500 +Kr. 6,956Kr. 34,78

*price indicative

Packaging Options:
RS Stock No.:
257-5802
Mfr. Part No.:
IRLHM620TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

20V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Maximum Drain Source Resistance Rds

2.5mΩ

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

37W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface-mount package

Potential alternative to high-RDS(on) SuperSO8 package

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