Infineon HEXFET Type N-Channel MOSFET, 40 A, 20 V PQFN

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Subtotal (1 reel of 4000 units)*

Kr.11 860 00 

(exc. VAT)

Kr.14 824 00 

(inc. VAT)

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Units
Per unit
Per Reel*
4000 +Kr. 2,965Kr. 11 860,00

*price indicative

RS Stock No.:
257-5570
Mfr. Part No.:
IRLHM620TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

20V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

2.5mΩ

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

37W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface-mount package

Potential alternative to high-RDS(on) SuperSO8 package

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