Infineon HEXFET Type N-Channel MOSFET, 3.4 A, 20 V PQFN IRLHS6276TRPBF

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Subtotal (1 pack of 10 units)*

Kr.58 92 

(exc. VAT)

Kr.73 65 

(inc. VAT)

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  • 3 570 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Pack*
10 - 90Kr. 5,892Kr. 58,92
100 - 240Kr. 5,606Kr. 56,06
250 - 490Kr. 5,011Kr. 50,11
500 - 990Kr. 3,546Kr. 35,46
1000 +Kr. 2,883Kr. 28,83

*price indicative

Packaging Options:
RS Stock No.:
257-5826
Mfr. Part No.:
IRLHS6276TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.4A

Maximum Drain Source Voltage Vds

20V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Maximum Drain Source Resistance Rds

65mΩ

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

9.6W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±12 V

Typical Gate Charge Qg @ Vgs

3.1nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Width

2 mm

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface-mount power package

Low RDS(on) in a small package

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