Infineon HEXFET Type N-Channel MOSFET, 3.4 A, 30 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

Kr.2 829 00 

(exc. VAT)

Kr.3 537 00 

(inc. VAT)

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3000 +Kr. 0,943Kr. 2 829,00

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RS Stock No.:
913-4070
Mfr. Part No.:
IRLML6346TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.4A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

2.9nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

1.3W

Maximum Gate Source Voltage Vgs

12 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.02mm

Length

3.04mm

Width

1.4 mm

Automotive Standard

No

COO (Country of Origin):
PH

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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