Infineon HEXFET Type N-Channel MOSFET, -3.4 A, -40 V, 6-Pin TSOP-6 IRF5803TRPBF

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Subtotal (1 pack of 10 units)*

Kr.31 35 

(exc. VAT)

Kr.39 19 

(inc. VAT)

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Last RS stock
  • Final 510 unit(s), ready to ship
Units
Per unit
Per Pack*
10 - 90Kr. 3,135Kr. 31,35
100 - 240Kr. 2,974Kr. 29,74
250 - 490Kr. 2,677Kr. 26,77
500 - 990Kr. 2,334Kr. 23,34
1000 +Kr. 1,441Kr. 14,41

*price indicative

Packaging Options:
RS Stock No.:
257-9292
Mfr. Part No.:
IRF5803TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

-3.4A

Maximum Drain Source Voltage Vds

-40V

Series

HEXFET

Package Type

TSOP-6

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

190mΩ

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

25nC

Maximum Power Dissipation Pd

1.3W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the -40V single p channel power mosfet in a TSOP 6 (Micro 6) package. The IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount power package

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