Infineon HEXFET Type N-Channel MOSFET, 600 mA, 200 V Enhancement, 6-Pin TSOP IRF5801TRPBF

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Subtotal (1 pack of 10 units)*

Kr.35 14 

(exc. VAT)

Kr.43 92 

(inc. VAT)

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Units
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Per Pack*
10 +Kr. 3,514Kr. 35,14

*price indicative

Packaging Options:
RS Stock No.:
301-631
Mfr. Part No.:
IRF5801TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

600mA

Maximum Drain Source Voltage Vds

200V

Package Type

TSOP

Series

HEXFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

2.2Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3.9nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Length

3mm

Standards/Approvals

No

Height

0.9mm

Width

1.5 mm

Distrelec Product Id

304-36-986

Automotive Standard

No

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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