Infineon HEXFET Type N-Channel MOSFET, 22 A, 20 V PQFN

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Subtotal (1 reel of 4000 units)*

Kr.7 436 00 

(exc. VAT)

Kr.9 296 00 

(inc. VAT)

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  • Plus 4 000 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Reel*
4000 - 4000Kr. 1,859Kr. 7 436,00
8000 +Kr. 1,766Kr. 7 064,00

*price indicative

RS Stock No.:
257-9444
Mfr. Part No.:
IRLHS6242TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

22A

Maximum Drain Source Voltage Vds

20V

Series

HEXFET

Package Type

PQFN

Mount Type

Through Hole

Maximum Drain Source Resistance Rds

15mΩ

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

9.6W

Typical Gate Charge Qg @ Vgs

14nC

Maximum Gate Source Voltage Vgs

12 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRLHS series is the 20V N channel strong IRFET power mosfet in a PQFN 2x2 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount power package

Low RDS (on) in a small package

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