Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 30 V PQFN

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Subtotal (1 reel of 4000 units)*

Kr.7 012 00 

(exc. VAT)

Kr.8 764 00 

(inc. VAT)

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Units
Per unit
Per Reel*
4000 +Kr. 1,753Kr. 7 012,00

*price indicative

RS Stock No.:
257-9446
Mfr. Part No.:
IRLHS6376TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.6A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

PQFN

Mount Type

Through Hole

Maximum Drain Source Resistance Rds

15mΩ

Maximum Power Dissipation Pd

4.9W

Typical Gate Charge Qg @ Vgs

2.8nC

Maximum Gate Source Voltage Vgs

12 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRLHS series is the 30V Dual N channel strong IRFET power mosfet in a PQFN 2x2 package. The strong IRFET power mosfet family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount power package

Low RDS (on) in a small package

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