Infineon HEXFET Type N-Channel MOSFET, 82 A, 30 V Enhancement, 8-Pin PQFN IRFH8325TRPBF

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Subtotal (1 pack of 50 units)*

Kr.215 80 

(exc. VAT)

Kr.269 75 

(inc. VAT)

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Last RS stock
  • Final 2 950 unit(s), ready to ship
Units
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Per Pack*
50 +Kr. 4,316Kr. 215,80

*price indicative

Packaging Options:
RS Stock No.:
217-2613
Mfr. Part No.:
IRFH8325TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

82A

Maximum Drain Source Voltage Vds

30V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

32nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

3.6W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

6.02mm

Width

4.98 mm

Height

1.17mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Logic level : Optimized for 5 V gate drive voltage

Industry standard surface-mount power package

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