Infineon HEXFET Type N-Channel MOSFET, 44 A, 30 V Enhancement, 8-Pin PQFN

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Subtotal (1 reel of 4000 units)*

Kr.7 804 00 

(exc. VAT)

Kr.9 756 00 

(inc. VAT)

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Units
Per unit
Per Reel*
4000 - 4000Kr. 1,951Kr. 7 804,00
8000 +Kr. 1,854Kr. 7 416,00

*price indicative

RS Stock No.:
217-2614
Mfr. Part No.:
IRFH8334TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

44A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

7.1nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

3.2W

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Length

6.02mm

Standards/Approvals

RoHS

Width

4.98 mm

Height

1.17mm

Automotive Standard

No

The Infineon 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Optimized for 5V gate-drive voltage (called Logic level)

Industry standard surface-mount power package

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