Infineon HEXFET Type N-Channel MOSFET, 82 A, 30 V Enhancement, 8-Pin PQFN

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Subtotal (1 reel of 4000 units)*

Kr. 8 976,00

(exc. VAT)

Kr. 11 220,00

(inc. VAT)

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Units
Per unit
Per Reel*
4000 - 4000Kr. 2,244Kr. 8 976,00
8000 +Kr. 2,188Kr. 8 752,00

*price indicative

RS Stock No.:
217-2612
Mfr. Part No.:
IRFH8325TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

82A

Maximum Drain Source Voltage Vds

30V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.2mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

32nC

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

3.6W

Maximum Operating Temperature

150°C

Height

1.17mm

Width

4.98 mm

Standards/Approvals

RoHS

Length

6.02mm

Automotive Standard

No

The Infineon 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Logic level : Optimized for 5 V gate drive voltage

Industry standard surface-mount power package

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