Infineon HEXFET Type N-Channel MOSFET, 49 A, 20 V PQFN IRFH6200TRPBF

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Subtotal (1 pack of 5 units)*

Kr.88 41 

(exc. VAT)

Kr.110 51 

(inc. VAT)

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Per unit
Per Pack*
5 +Kr. 17,682Kr. 88,41

*price indicative

Packaging Options:
RS Stock No.:
257-9377
Mfr. Part No.:
IRFH6200TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

49A

Maximum Drain Source Voltage Vds

20V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Maximum Drain Source Resistance Rds

15mΩ

Typical Gate Charge Qg @ Vgs

155nC

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

250W

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFH series is the 20V single n channel strong IRFET power mosfet in a PQFN 5x6 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Industry standard surface mount power package

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Softer body diode compared to previous silicon generation

Wide portfolio available

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