Infineon HEXFET Fifth Generation Type N-Channel MOSFET, 1.9 A, 55 V SOT-223

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Subtotal (1 reel of 2500 units)*

Kr.4 745 00 

(exc. VAT)

Kr.5 930 00 

(inc. VAT)

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  • 2 500 unit(s) ready to ship
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Units
Per unit
Per Reel*
2500 +Kr. 1,898Kr. 4 745,00

*price indicative

RS Stock No.:
257-5538
Distrelec Article No.:
304-40-532
Mfr. Part No.:
IRFL014NTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

55V

Package Type

SOT-223

Series

HEXFET Fifth Generation

Mount Type

Surface

Maximum Drain Source Resistance Rds

0.16Ω

Maximum Power Dissipation Pd

2.1W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

7nC

Maximum Operating Temperature

150°C

Standards/Approvals

Lead-Free

Automotive Standard

No

The Infineon MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve extremely low.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface mount package

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