Infineon HEXFET Fifth Generation N-Channel MOSFET, 1.9 A, 55 V SOT-223
- RS Stock No.:
- 257-5538
- Distrelec Article No.:
- 304-40-532
- Mfr. Part No.:
- IRFL014NTRPBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2500 units)*
Kr. 7 375,00
(exc. VAT)
Kr. 9 225,00
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 2 500 unit(s) shipping from 28 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | Kr. 2,95 | Kr. 7 375,00 |
| 5000 - 5000 | Kr. 2,714 | Kr. 6 785,00 |
| 7500 + | Kr. 2,655 | Kr. 6 637,50 |
*price indicative
- RS Stock No.:
- 257-5538
- Distrelec Article No.:
- 304-40-532
- Mfr. Part No.:
- IRFL014NTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET Fifth Generation | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.16Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.1W | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead-Free | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET Fifth Generation | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.16Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.1W | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead-Free | ||
Automotive Standard No | ||
The Infineon MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve extremely low.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface mount package
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