Infineon HEXFET Type N-Channel MOSFET, 4.4 A, 55 V Enhancement, 4-Pin SOT-223 IRLL024NTRPBF
- RS Stock No.:
- 830-3300
- Distrelec Article No.:
- 304-44-473
- Mfr. Part No.:
- IRLL024NTRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
Kr.137 18
(exc. VAT)
Kr.171 48
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 520 unit(s) ready to ship
- Plus 1 340 unit(s) shipping from 26. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | Kr. 6,859 | Kr. 137,18 |
| 100 - 180 | Kr. 4,731 | Kr. 94,62 |
| 200 - 480 | Kr. 4,456 | Kr. 89,12 |
| 500 - 980 | Kr. 4,113 | Kr. 82,26 |
| 1000 + | Kr. 3,833 | Kr. 76,66 |
*price indicative
- RS Stock No.:
- 830-3300
- Distrelec Article No.:
- 304-44-473
- Mfr. Part No.:
- IRLL024NTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.4A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SOT-223 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10.4nC | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Height | 1.739mm | |
| Width | 3.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.4A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SOT-223 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10.4nC | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Height 1.739mm | ||
Width 3.7 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223 IRLL2705TRPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223 IRFL024NTRPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223 IRLL014NTRPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223 IRFL024ZTRPBF