Infineon HEXFET Type N-Channel MOSFET, 4.4 A, 55 V Enhancement, 4-Pin SOT-223 IRLL024NTRPBF
- RS Stock No.:
- 830-3300
- Mfr. Part No.:
- IRLL024NTRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
Kr.137 18
(exc. VAT)
Kr.171 48
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 520 unit(s) ready to ship
- Plus 1 340 unit(s) shipping from 31. desember 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | Kr. 6,859 | Kr. 137,18 |
| 100 - 180 | Kr. 4,731 | Kr. 94,62 |
| 200 - 480 | Kr. 4,456 | Kr. 89,12 |
| 500 - 980 | Kr. 4,113 | Kr. 82,26 |
| 1000 + | Kr. 3,833 | Kr. 76,66 |
*price indicative
- RS Stock No.:
- 830-3300
- Mfr. Part No.:
- IRLL024NTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.4A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SOT-223 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10.4nC | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Height | 1.739mm | |
| Width | 3.7 mm | |
| Distrelec Product Id | 304-44-473 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.4A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SOT-223 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10.4nC | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 2.1W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Height 1.739mm | ||
Width 3.7 mm | ||
Distrelec Product Id 304-44-473 | ||
Automotive Standard No | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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