Infineon HEXFET Type N-Channel MOSFET, 4.4 A, 55 V Enhancement, 4-Pin SOT-223

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Subtotal (1 reel of 2500 units)*

Kr.8 475 00 

(exc. VAT)

Kr.10 600 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 - 2500Kr. 3,39Kr. 8 475,00
5000 +Kr. 3,22Kr. 8 050,00

*price indicative

RS Stock No.:
168-8745
Mfr. Part No.:
IRLL024NTRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

55V

Package Type

SOT-223

Series

HEXFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10.4nC

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

2.1W

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.739mm

Width

3.7 mm

Length

6.7mm

Automotive Standard

No

COO (Country of Origin):
MY

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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