Infineon HEXFET Type N-Channel MOSFET, 2.8 A, 55 V Enhancement, 4-Pin SOT-223 IRFL024NTRPBF

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Subtotal (1 pack of 25 units)*

Kr.136 45 

(exc. VAT)

Kr.170 55 

(inc. VAT)

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  • 1 200 unit(s) ready to ship
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Units
Per unit
Per Pack*
25 - 100Kr. 5,458Kr. 136,45
125 - 225Kr. 5,185Kr. 129,63
250 - 600Kr. 4,97Kr. 124,25
625 - 1225Kr. 4,75Kr. 118,75
1250 +Kr. 3,002Kr. 75,05

*price indicative

Packaging Options:
RS Stock No.:
262-6764
Mfr. Part No.:
IRFL024NTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.8A

Maximum Drain Source Voltage Vds

55V

Package Type

SOT-223

Series

HEXFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

304-41-676

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Ultra low on-resistance

Dynamic dv/dt rating

Fasts switching

Fully avalanche rated

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