Infineon HEXFET Type N-Channel MOSFET, 162 A, 40 V TO-263

View all MOSFETs

Subtotal (1 reel of 800 units)*

Kr.7 512 00 

(exc. VAT)

Kr.9 392 00 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 13. mars 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
800 +Kr. 9,39Kr. 7 512,00

*price indicative

RS Stock No.:
257-9273
Mfr. Part No.:
IRF1404STRLPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

162A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

TO-263

Maximum Drain Source Resistance Rds

4mΩ

Maximum Power Dissipation Pd

200W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

160nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the 40V single n channel HEXFET power mosfet in a D2 Pak package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Optimized for 10 V gate drive voltage (called normal level)

Industry standard surface mount power package

High current carrying capability package (up to 195 A, die size dependent)

Capable of being wave soldered

Related links