MPN

Infineon Type N-Channel MOSFET, 131 A, 55 V TO-263

Name: Infineon Type N-Channel MOSFET, 131 A, 55 V TO-263
Brand: Infineon
SKU: 257-9275
Price: 14.04 NOK
Availability: BackOrder

Bulk discount available

Subtotal (1 reel of 800 units)*

Kr.8 984 00

(exc. VAT)

Kr.11 232 00

(inc. VAT)

Temporarily out of stock

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
800 - 800	Kr. 11,23	Kr. 8 984,00
1600 +	Kr. 10,668	Kr. 8 534,40

*price indicative

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	131A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-263
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	5.3mΩ
	Maximum Power Dissipation Pd	200W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	170nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 131A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-263
	Mount Type Surface
	Maximum Drain Source Resistance Rds 5.3mΩ
	Maximum Power Dissipation Pd 200W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 170nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

The Infineon IRF series is the 55V single n channel HEXFET power mosfet in a D2 Pak package.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount power package

Capable of being wave soldered

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