Infineon OptiMOS-TM5 Type N-Channel MOSFET, 131 A, 80 V Enhancement, 8-Pin TDSON BSC037N08NS5ATMA1

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

Kr.107 34 

(exc. VAT)

Kr.134 175 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 11 420 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 20Kr. 21,468Kr. 107,34
25 - 45Kr. 19,334Kr. 96,67
50 - 120Kr. 18,006Kr. 90,03
125 - 245Kr. 16,954Kr. 84,77
250 +Kr. 15,672Kr. 78,36

*price indicative

Packaging Options:
RS Stock No.:
222-4618
Mfr. Part No.:
BSC037N08NS5ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

131A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS-TM5

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

46nC

Maximum Power Dissipation Pd

114W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.35mm

Height

1.2mm

Width

6.1 mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

Related links