Infineon OptiMOS-TM5 N-Channel MOSFET, 131 A, 80 V Enhancement, 8-Pin TDSON BSC037N08NS5ATMA1

RS Stock No.:: 222-4617
Mfr. Part No.:: BSC037N08NS5ATMA1
Brand:: Infineon

Infineon OptiMOS-TM5 N-Channel MOSFET, 131 A, 80 V Enhancement, 8-Pin TDSON BSC037N08NS5ATMA1

Subtotal (5000 units, on reels of 5000)*

Kr. 49 080,00

(exc. VAT)

Kr. 61 350,00

(inc. VAT)

FREE delivery for online orders over 750,00 kr

In Stock

10 000 unit(s) ready to ship

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Units	Per unit	Per Reel*
5000 +	Kr. 9,816	Kr. 49 080,00

*price indicative

RS Stock No.:: 222-4617
Mfr. Part No.:: BSC037N08NS5ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	131A
	Maximum Drain Source Voltage Vds	80V
	Series	OptiMOS-TM5
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.7mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	46nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	114W
	Maximum Operating Temperature	+175°C
	Width	6.1mm
	Standards/Approvals	No
	Length	5.35mm
	Height	1.2mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 131A
	Maximum Drain Source Voltage Vds 80V
	Series OptiMOS-TM5
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.7mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 46nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 114W
	Maximum Operating Temperature +175°C
	Width 6.1mm
	Standards/Approvals No
	Length 5.35mm
	Height 1.2mm
	Automotive Standard No

Datasheet - BSC037N08NS5ATMA1

Infineon OptiMOS-TM5 Series MOSFET, 80V Maximum Drain Source Voltage, 131A Maximum Continuous Drain Current - BSC037N08NS5ATMA1

This MOSFET is a high-current N-channel enhancement device designed for surface-mount power conversion and switching tasks. It operates across a wide ambient range and accommodates demanding thermal conditions while providing low voltage drop and Rapid gate-driven switching suitable for industrial and power-supply environments.

Features and Benefits:

• 80V drain rating enabling robust high-voltage switching
• 131A continuous drain current for heavy current handling
• 3.7mΩ low Rds(on) reducing conduction losses
• 114W power dissipation allowing sustained thermal load
• 46nC typical gate charge supporting fast switching control
• 20V gate tolerance permitting flexible drive voltages

Applications

• Suitable for high-power DC-DC converters in power supplies
• Ideal for synchronous rectification in server power rails
• Used for motor-drive stages requiring high continuous current
• Can be used for telecoms power distribution and UPS units
• Suitable for Compact surface-mount power modules in industrial systems

What temperature extremes can the device tolerate during operation?

It is specified to operate from -55°C up to +175°C.

How many electrical connections does the package provide for PCB layout?

The package exposes eight pins for routing and thermal connection.

What packaging and mounting form factor should designers expect?

It is supplied in a TDSON package intended for surface mounting.

What is the forward voltage during conduction under typical conditions?

The forward voltage is specified at 1.1V under conduction conditions.

What channel type and mode determine switching polarity and behaviour?

It uses an N-channel structure in enhancement mode for conventional high-side or low-side switching.