Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V SO-8 IRF6644TRPBF

View all MOSFETs

Subtotal (1 pack of 2 units)*

Kr.43 93 

(exc. VAT)

Kr.54 912 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 4 478 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 +Kr. 21,965Kr. 43,93

*price indicative

Packaging Options:
RS Stock No.:
257-9296
Mfr. Part No.:
IRF6644TRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

57A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

HEXFET

Maximum Drain Source Resistance Rds

13mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

89W

Typical Gate Charge Qg @ Vgs

28nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

High current rating

Dual side cooling capability

Low package height of 0.7mm

Low parasitic (1 to 2 nH) inductance package

100 percent lead free (No RoHS exemption)

Related links