Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V SO-8

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Subtotal (1 reel of 4800 units)*

Kr.50 222 40 

(exc. VAT)

Kr.62 779 20 

(inc. VAT)

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Units
Per unit
Per Reel*
4800 +Kr. 10,463Kr. 50 222,40

*price indicative

RS Stock No.:
257-9295
Mfr. Part No.:
IRF6644TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

57A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

SO-8

Maximum Drain Source Resistance Rds

13mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

89W

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

28nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

High current rating

Dual side cooling capability

Low package height of 0.7mm

Low parasitic (1 to 2 nH) inductance package

100 percent lead free (No RoHS exemption)

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