Infineon HEXFET Type N-Channel MOSFET, -160 A, -30 V DirectFET IRF9383MTRPBF

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Subtotal (1 pack of 2 units)*

Kr.41 42 

(exc. VAT)

Kr.51 78 

(inc. VAT)

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Last RS stock
  • Final 4 774 unit(s), ready to ship
Units
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Per Pack*
2 +Kr. 20,71Kr. 41,42

*price indicative

Packaging Options:
RS Stock No.:
257-9333
Mfr. Part No.:
IRF9383MTRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

-160A

Maximum Drain Source Voltage Vds

-30V

Package Type

DirectFET

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

4.8mΩ

Typical Gate Charge Qg @ Vgs

67nC

Maximum Power Dissipation Pd

113W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-40°C

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the -30V single p channel strong IRFET power mosfet in a direct FET mx package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

High current rating

Dual side cooling capability

Low package height of 0.7mm

Low parasitic (1 to 2 nH) inductance package

100 percent lead free (No RoHS exemption)

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