Infineon HEXFET Type N-Channel MOSFET, 3.2 A, 100 V PQFN

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Subtotal (1 reel of 4000 units)*

Kr.11 972 00 

(exc. VAT)

Kr.14 964 00 

(inc. VAT)

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  • Plus 4 000 unit(s) shipping from 19. januar 2026
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Units
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Per Reel*
4000 +Kr. 2,993Kr. 11 972,00

*price indicative

RS Stock No.:
257-9386
Mfr. Part No.:
IRFHM3911TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.2A

Maximum Drain Source Voltage Vds

100V

Package Type

PQFN

Series

HEXFET

Mount Type

Through Hole

Maximum Drain Source Resistance Rds

15mΩ

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

The Infineon IRFHM series is the 100V single n channel IR mosfet in a PQFN 3.3x3.3 package. The IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount package


Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount package

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