Infineon HEXFET Type N-Channel MOSFET, 3.2 A, 30 V Enhancement, 6-Pin Micro6 IRLMS1503TRPBF

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Subtotal (1 pack of 50 units)*

Kr.172 25 

(exc. VAT)

Kr.215 30 

(inc. VAT)

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Units
Per unit
Per Pack*
50 - 50Kr. 3,445Kr. 172,25
100 - 200Kr. 2,583Kr. 129,15
250 - 450Kr. 2,444Kr. 122,20
500 - 1200Kr. 2,274Kr. 113,70
1250 +Kr. 1,894Kr. 94,70

*price indicative

Packaging Options:
RS Stock No.:
262-6786
Mfr. Part No.:
IRLMS1503TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.2A

Maximum Drain Source Voltage Vds

30V

Package Type

Micro6

Series

HEXFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

200mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6.4nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

1.7W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Distrelec Product Id

304-41-683

Automotive Standard

No

The Infineon power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is combined with the fast switching speed and ruggedized device design that power MOSFET well known for, provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Ultra low Rds

N-channel

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