Infineon HEXFET Type N-Channel MOSFET, 21 A, 60 V Enhancement, 6-Pin DirectFET AUIRF7640S2TR

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Subtotal (1 pack of 20 units)*

Kr.305 42 

(exc. VAT)

Kr.381 78 

(inc. VAT)

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Per Pack*
20 - 20Kr. 15,271Kr. 305,42
40 +Kr. 14,506Kr. 290,12

*price indicative

Packaging Options:
RS Stock No.:
215-2448
Mfr. Part No.:
AUIRF7640S2TR
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

DirectFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

36mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

7.3nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

30W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon Automotive DirectFET® Power MOSFET series has 60V maximum drain source voltage with 20A maximum continuous drain current in a DirectFET Small Can package. The AUIRF7640S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.

Advanced Process Technology

Optimized for Class D Audio Amplifier and High Speed Switching Applications

Low Rds(on) for Improved Efficiency

Repetitive Avalanche Capability for Robustness and Reliability

Lead free, RoHS and Halogen free

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