Infineon HEXFET N-Channel MOSFET, 21 A, 25 V, 6-Pin PQFN IRFHS8242TRPBF
- RS Stock No.:
- 257-5793
- Distrelec Article No.:
- 304-40-531
- Mfr. Part No.:
- IRFHS8242TRPBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
Kr. 91,75
(exc. VAT)
Kr. 114,75
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 6 825 unit(s) shipping from 28 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | Kr. 3,67 | Kr. 91,75 |
| 125 - 225 | Kr. 3,482 | Kr. 87,05 |
| 250 - 600 | Kr. 3,121 | Kr. 78,03 |
| 625 - 1225 | Kr. 2,572 | Kr. 64,30 |
| 1250 + | Kr. 1,652 | Kr. 41,30 |
*price indicative
- RS Stock No.:
- 257-5793
- Distrelec Article No.:
- 304-40-531
- Mfr. Part No.:
- IRFHS8242TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Length | 2mm | |
| Width | 2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Length 2mm | ||
Width 2mm | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Low RDSon (< 58 m)
Low thermal resistance to PCB (<12°C/W)
100% Rg tested
Low profile (<09 mm)
Industry-standard pinout
Compatible with existing surface mount techniques
RoHS compliant containing no lead, no bromide and no halogen environmentally
MSL1, industrial qualification
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