Infineon HEXFET Type N-Channel MOSFET, 21 A, 25 V, 6-Pin PQFN IRFHS8242TRPBF
- RS Stock No.:
- 257-5793
- Distrelec Article No.:
- 304-40-531
- Mfr. Part No.:
- IRFHS8242TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr.136 20
(exc. VAT)
Kr.170 25
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 6 825 unit(s) shipping from 09. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | Kr. 5,448 | Kr. 136,20 |
| 125 - 225 | Kr. 5,176 | Kr. 129,40 |
| 250 - 600 | Kr. 4,631 | Kr. 115,78 |
| 625 - 1225 | Kr. 3,816 | Kr. 95,40 |
| 1250 + | Kr. 2,453 | Kr. 61,33 |
*price indicative
- RS Stock No.:
- 257-5793
- Distrelec Article No.:
- 304-40-531
- Mfr. Part No.:
- IRFHS8242TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Operating Temperature | 150°C | |
| Length | 2mm | |
| Height | 0.9mm | |
| Width | 2 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Operating Temperature 150°C | ||
Length 2mm | ||
Height 0.9mm | ||
Width 2 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Low RDSon (< 58 m)
Low thermal resistance to PCB (<12°C/W)
100% Rg tested
Low profile (<09 mm)
Industry-standard pinout
Compatible with existing surface mount techniques
RoHS compliant containing no lead, no bromide and no halogen environmentally
MSL1, industrial qualification
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