Infineon HEXFET Type N-Channel MOSFET, 21 A, 25 V, 6-Pin PQFN IRFHS8242TRPBF
- RS Stock No.:
- 257-5793
- Mfr. Part No.:
- IRFHS8242TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr.136 20
(exc. VAT)
Kr.170 25
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 6 825 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | Kr. 5,448 | Kr. 136,20 |
| 125 - 225 | Kr. 5,176 | Kr. 129,40 |
| 250 - 600 | Kr. 4,631 | Kr. 115,78 |
| 625 - 1225 | Kr. 3,816 | Kr. 95,40 |
| 1250 + | Kr. 2,453 | Kr. 61,33 |
*price indicative
- RS Stock No.:
- 257-5793
- Mfr. Part No.:
- IRFHS8242TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 2mm | |
| Height | 0.9mm | |
| Width | 2 mm | |
| Distrelec Product Id | 304-40-531 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 2.1W | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 2mm | ||
Height 0.9mm | ||
Width 2 mm | ||
Distrelec Product Id 304-40-531 | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Low RDSon (< 58 m)
Low thermal resistance to PCB (<12°C/W)
100% Rg tested
Low profile (<09 mm)
Industry-standard pinout
Compatible with existing surface mount techniques
RoHS compliant containing no lead, no bromide and no halogen environmentally
MSL1, industrial qualification
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