Infineon HEXFET Type N-Channel MOSFET, 21 A, 25 V, 6-Pin PQFN

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Subtotal (1 reel of 4000 units)*

Kr.11 120 00 

(exc. VAT)

Kr.13 920 00 

(inc. VAT)

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  • Plus 4 000 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Reel*
4000 - 4000Kr. 2,78Kr. 11 120,00
8000 +Kr. 2,446Kr. 9 784,00

*price indicative

RS Stock No.:
257-5535
Mfr. Part No.:
IRFHS8242TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

25V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

13mΩ

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2.1W

Typical Gate Charge Qg @ Vgs

4.3nC

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

2 mm

Standards/Approvals

RoHS

Height

0.9mm

Length

2mm

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Low RDSon (< 58 m)

Low thermal resistance to PCB (<12°C/W)

100% Rg tested

Low profile (<09 mm)

Industry-standard pinout

Compatible with existing surface mount techniques

RoHS compliant containing no lead, no bromide and no halogen environmentally

MSL1, industrial qualification

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