Infineon HEXFET Type N-Channel MOSFET, 21 A, 30 V PQFN

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Subtotal (1 reel of 4000 units)*

Kr.15 788 00 

(exc. VAT)

Kr.19 736 00 

(inc. VAT)

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Units
Per unit
Per Reel*
4000 +Kr. 3,947Kr. 15 788,00

*price indicative

RS Stock No.:
257-9388
Mfr. Part No.:
IRFHM830TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

30V

Package Type

PQFN

Series

HEXFET

Mount Type

Through Hole

Maximum Drain Source Resistance Rds

15mΩ

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

37W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

15nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFHM series is the 30V single n channel strong IRFET power mosfet in a PQFN 3.3x3.3 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount package

Potential alternative to high RDS (on) Super SO 8 package


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