Infineon HEXFET Type N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8 IRF7862TRPBF

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Subtotal (1 pack of 5 units)*

Kr.54 67 

(exc. VAT)

Kr.68 34 

(inc. VAT)

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  • 2 975 unit(s) ready to ship
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Units
Per unit
Per Pack*
5 - 45Kr. 10,934Kr. 54,67
50 - 120Kr. 8,73Kr. 43,65
125 - 245Kr. 8,09Kr. 40,45
250 - 495Kr. 7,54Kr. 37,70
500 +Kr. 4,924Kr. 24,62

*price indicative

Packaging Options:
RS Stock No.:
257-9324
Mfr. Part No.:
IRF7862TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.5mΩ

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

30nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the 30V single n channel HEXFET power mosfet in a SO 8 package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Optimized for 5V gate drive voltage (called Logic level)

Industry standard surface mount package

Capable of being wave soldered

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