Infineon HEXFET Type N-Channel MOSFET, 14 A, 30 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 4000 units)*

Kr.28 596 00 

(exc. VAT)

Kr.35 744 00 

(inc. VAT)

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Units
Per unit
Per Reel*
4000 +Kr. 7,149Kr. 28 596,00

*price indicative

RS Stock No.:
217-2604
Mfr. Part No.:
IRF7458TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

14A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

39nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

4.9mm

Height

1.75mm

Width

3.9 mm

Automotive Standard

No

The Infineon 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package.

Ultra-Low Gate Impedance

Very Low RDS(on)

Fully Characterized Avalanche Voltage and Current

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