Infineon HEXFET Type N-Channel MOSFET, 9 A, 40 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 4000 units)*

Kr.17 760 00 

(exc. VAT)

Kr.22 200 00 

(inc. VAT)

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Units
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Per Reel*
4000 +Kr. 4,44Kr. 17 760,00

*price indicative

RS Stock No.:
217-2606
Mfr. Part No.:
IRF7469TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

21mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

39nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

1.75mm

Width

3.9 mm

Length

4.9mm

Automotive Standard

No

The Infineon 40V Single N-Channel HEXFET Power MOSFET in a SO-8 package.

Ultra-Low Gate Impedance

Very Low RDS(on)

Fully Characterized Avalanche Voltage and Current

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