Infineon HEXFET Type N-Channel MOSFET, 1.9 A, 150 V Enhancement, 8-Pin SO-8

View all MOSFETs

Subtotal (1 reel of 4000 units)*

Kr.11 508 00 

(exc. VAT)

Kr.14 384 00 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 4 000 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
4000 +Kr. 2,877Kr. 11 508,00

*price indicative

RS Stock No.:
262-6735
Mfr. Part No.:
IRF7465TRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

2.5W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

4 mm

Length

5mm

Height

1.75mm

Automotive Standard

No

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

Related links