Infineon HEXFET Type N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin SO-8

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Subtotal (1 pack of 5 units)*

Kr.60 33 

(exc. VAT)

Kr.75 41 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45Kr. 12,066Kr. 60,33
50 - 95Kr. 10,982Kr. 54,91
100 - 495Kr. 10,09Kr. 50,45
500 - 1995Kr. 8,648Kr. 43,24
2000 +Kr. 8,442Kr. 42,21

*price indicative

RS Stock No.:
273-2806
Mfr. Part No.:
IRF7351TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

17.8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

36nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

COO (Country of Origin):
PH
The Infineon MOSFET is a 60V N Channel HEXFET Power MOSFET. This MOSFET is used for low power motor drive systems and for isolated DC to DC converters.

Ultra low gate impedance

20V VGS maximum gate rating

Fully characterized avalanche voltage and current

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