Infineon HEXFET Type N-Channel MOSFET, 9 A, 40 V Enhancement, 8-Pin SO-8 IRF7469TRPBF

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Subtotal (1 pack of 20 units)*

Kr.127 58 

(exc. VAT)

Kr.159 48 

(inc. VAT)

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Per Pack*
20 +Kr. 6,379Kr. 127,58

*price indicative

Packaging Options:
RS Stock No.:
217-2607
Mfr. Part No.:
IRF7469TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

21mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

39nC

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

4.9mm

Height

1.75mm

Width

3.9 mm

Automotive Standard

No

The Infineon 40V Single N-Channel HEXFET Power MOSFET in a SO-8 package.

Ultra-Low Gate Impedance

Very Low RDS(on)

Fully Characterized Avalanche Voltage and Current

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