Infineon HEXFET Type N-Channel MOSFET, 320 A, 40 V Enhancement, 7-Pin TO-263

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Subtotal (1 reel of 800 units)*

Kr.16 078 40 

(exc. VAT)

Kr.20 097 60 

(inc. VAT)

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Units
Per unit
Per Reel*
800 +Kr. 20,098Kr. 16 078,40

*price indicative

RS Stock No.:
222-4605
Mfr. Part No.:
AUIRF2804STRL7P
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

320A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

1.6mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

170nC

Maximum Power Dissipation Pd

330W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

10.67mm

Height

4.83mm

Width

9.65 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced process technology

Ultra-low on-resistance Fast switching

Lead-Free, RoHS Compliant

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