Infineon HEXFET Type N-Channel MOSFET, 320 A, 40 V Enhancement, 7-Pin TO-263 AUIRF2804STRL7P

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Subtotal (1 pack of 2 units)*

Kr.123 61 

(exc. VAT)

Kr.154 512 

(inc. VAT)

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Units
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Per Pack*
2 - 18Kr. 61,805Kr. 123,61
20 - 48Kr. 55,715Kr. 111,43
50 - 98Kr. 51,995Kr. 103,99
100 - 198Kr. 48,22Kr. 96,44
200 +Kr. 45,13Kr. 90,26

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Packaging Options:
RS Stock No.:
222-4606
Mfr. Part No.:
AUIRF2804STRL7P
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

320A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

1.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

330W

Typical Gate Charge Qg @ Vgs

170nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

9.65 mm

Height

4.83mm

Length

10.67mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced process technology

Ultra-low on-resistance Fast switching

Lead-Free, RoHS Compliant

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