Infineon HEXFET Type N-Channel MOSFET, 523 A, 40 V Enhancement, 7-Pin TO-263

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Subtotal (1 reel of 800 units)*

Kr.22 404 00 

(exc. VAT)

Kr.28 004 80 

(inc. VAT)

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Per Reel*
800 +Kr. 28,005Kr. 22 404,00

*price indicative

RS Stock No.:
214-8962
Mfr. Part No.:
AUIRFSA8409-7TRL
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

523A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.69mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

305nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

375W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

9.65 mm

Standards/Approvals

No

Height

4.83mm

Length

10.54mm

Automotive Standard

AEC-Q101

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced Process Technology

New Ultra Low On-Resistance

Automotive Qualified

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