Infineon HEXFET Type N-Channel MOSFET, 105 A, 150 V Enhancement, 7-Pin TO-263

View all MOSFETs

Subtotal (1 reel of 800 units)*

Kr.24 049 60 

(exc. VAT)

Kr.30 062 40 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 22. november 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
800 +Kr. 30,062Kr. 24 049,60

*price indicative

RS Stock No.:
214-8958
Mfr. Part No.:
AUIRFS4115-7TRL
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

105A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

11.8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

380W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

73nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

4.83mm

Length

10.54mm

Width

9.65 mm

Automotive Standard

AEC-Q101

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced Process Technology

Ultra Low On-Resistance

Automotive Qualified

Related links