Infineon HEXFET Type N-Channel MOSFET, 523 A, 40 V Enhancement, 7-Pin TO-263 AUIRFSA8409-7TRL
- RS Stock No.:
- 214-8963
- Mfr. Part No.:
- AUIRFSA8409-7TRL
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.343 60
(exc. VAT)
Kr.429 50
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 2 360 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | Kr. 68,72 | Kr. 343,60 |
| 10 - 20 | Kr. 61,844 | Kr. 309,22 |
| 25 - 45 | Kr. 57,704 | Kr. 288,52 |
| 50 - 120 | Kr. 53,584 | Kr. 267,92 |
| 125 + | Kr. 49,49 | Kr. 247,45 |
*price indicative
- RS Stock No.:
- 214-8963
- Mfr. Part No.:
- AUIRFSA8409-7TRL
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 523A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.69mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 305nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.54mm | |
| Height | 4.83mm | |
| Width | 9.65 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 523A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.69mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 305nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.54mm | ||
Height 4.83mm | ||
Width 9.65 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Advanced Process Technology
New Ultra Low On-Resistance
Automotive Qualified
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