Infineon HEXFET Type N-Channel MOSFET, 21 A, 30 V PQFN IRFHM830TRPBF

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Subtotal (1 pack of 10 units)*

Kr.100 90 

(exc. VAT)

Kr.126 10 

(inc. VAT)

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  • 3 590 unit(s) ready to ship
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Units
Per unit
Per Pack*
10 - 90Kr. 10,09Kr. 100,90
100 - 240Kr. 9,587Kr. 95,87
250 - 490Kr. 9,198Kr. 91,98
500 - 990Kr. 8,774Kr. 87,74
1000 +Kr. 8,168Kr. 81,68

*price indicative

Packaging Options:
RS Stock No.:
257-9389
Mfr. Part No.:
IRFHM830TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

PQFN

Mount Type

Through Hole

Maximum Drain Source Resistance Rds

15mΩ

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

37W

Typical Gate Charge Qg @ Vgs

15nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFHM series is the 30V single n channel strong IRFET power mosfet in a PQFN 3.3x3.3 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount package

Potential alternative to high RDS (on) Super SO 8 package


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