Infineon HEXFET Type N-Channel MOSFET, 43 A, 200 V TO-263

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Subtotal (1 reel of 800 units)*

Kr.11 860 80 

(exc. VAT)

Kr.14 825 60 

(inc. VAT)

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Units
Per unit
Per Reel*
800 +Kr. 14,826Kr. 11 860,80

*price indicative

RS Stock No.:
257-9427
Mfr. Part No.:
IRFS38N20DTRLP
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

43A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

54mΩ

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

60nC

Maximum Power Dissipation Pd

320W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFS series is the 200V single n channel IR mosfet in a D2 Pak package.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount power package

High current carrying capability package (up to 195 A, die size dependent)

Capable of being wave soldered

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