Infineon HEXFET Type N-Channel MOSFET, 43 A, 200 V TO-263

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Subtotal (1 reel of 800 units)*

Kr.13 121 60 

(exc. VAT)

Kr.16 401 60 

(inc. VAT)

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Units
Per unit
Per Reel*
800 +Kr. 16,402Kr. 13 121,60

*price indicative

RS Stock No.:
257-9427
Mfr. Part No.:
IRFS38N20DTRLP
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

43A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

54mΩ

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

320W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

60nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFS series is the 200V single n channel IR mosfet in a D2 Pak package.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount power package

High current carrying capability package (up to 195 A, die size dependent)

Capable of being wave soldered


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