Infineon HEXFET Type N-Channel MOSFET, 99 A, 60 V TO-252 IRLR3636TRLPBF

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Subtotal (1 pack of 5 units)*

Kr.72 82 

(exc. VAT)

Kr.91 025 

(inc. VAT)

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  • 2 835 unit(s) ready to ship
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Units
Per unit
Per Pack*
5 - 45Kr. 14,564Kr. 72,82
50 - 120Kr. 12,698Kr. 63,49
125 - 245Kr. 11,828Kr. 59,14
250 - 495Kr. 11,052Kr. 55,26
500 +Kr. 8,008Kr. 40,04

*price indicative

Packaging Options:
RS Stock No.:
257-9458
Mfr. Part No.:
IRLR3636TRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

99A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

TO-252

Maximum Drain Source Resistance Rds

8.3mΩ

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

143W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

33nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRLR series is the 60V single n channel power mosfet in a D-Pak package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount package

Silicon optimized for applications switching below 100 kHz

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