Infineon HEXFET Type N-Channel MOSFET, 5 A, 200 V TO-252 IRFR220NTRPBF

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Subtotal (1 pack of 5 units)*

Kr.44 27 

(exc. VAT)

Kr.55 34 

(inc. VAT)

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  • 1 045 unit(s) ready to ship
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Units
Per unit
Per Pack*
5 - 45Kr. 8,854Kr. 44,27
50 - 120Kr. 7,986Kr. 39,93
125 - 245Kr. 7,436Kr. 37,18
250 - 495Kr. 6,91Kr. 34,55
500 +Kr. 6,406Kr. 32,03

*price indicative

Packaging Options:
RS Stock No.:
258-3982
Mfr. Part No.:
IRFR220NTRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

600mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

43W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

15nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

304-40-536

The Infineon MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Increased ruggedness

Wide availability from distribution partners

Industry standard qualification level

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