Infineon HEXFET Type N-Channel MOSFET, 24 A, 200 V Enhancement, 3-Pin TO-252 IRFR4620TRLPBF

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Subtotal (1 pack of 10 units)*

Kr.144 14 

(exc. VAT)

Kr.180 18 

(inc. VAT)

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  • Plus 120 unit(s) shipping from 29. desember 2025
  • Plus 60 unit(s) shipping from 29. desember 2025
  • Plus 3 510 unit(s) shipping from 05. januar 2026
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Units
Per unit
Per Pack*
10 +Kr. 14,414Kr. 144,14

*price indicative

Packaging Options:
RS Stock No.:
915-5023
Mfr. Part No.:
IRFR4620TRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

78mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

25nC

Maximum Power Dissipation Pd

144W

Maximum Operating Temperature

175°C

Width

7.49 mm

Standards/Approvals

No

Height

2.39mm

Length

6.73mm

Automotive Standard

No

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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