Infineon BSC500N20NS3 G N-Channel MOSFET, 24 A, 200 V Enhancement, 8-Pin TDSON BSC500N20NS3GATMA1
- RS Stock No.:
- 170-2351
- Mfr. Part No.:
- BSC500N20NS3GATMA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
Kr. 178,69
(exc. VAT)
Kr. 223,36
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 17,869 | Kr. 178,69 |
| 50 - 90 | Kr. 14,30 | Kr. 143,00 |
| 100 - 240 | Kr. 13,431 | Kr. 134,31 |
| 250 - 490 | Kr. 12,504 | Kr. 125,04 |
| 500 + | Kr. 11,623 | Kr. 116,23 |
*price indicative
- RS Stock No.:
- 170-2351
- Mfr. Part No.:
- BSC500N20NS3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TDSON | |
| Series | BSC500N20NS3 G | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 96W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 900mV | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.35mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TDSON | ||
Series BSC500N20NS3 G | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 96W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 900mV | ||
Maximum Operating Temperature 150°C | ||
Width 6.35mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Length 5.35mm | ||
Automotive Standard No | ||
Infineon's 200V OptiMOS™ products are performance leading Benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives
Industry’s lowest R DS(on)
Lowest Q g and Q gd
Halogen free
Benefits:
Highest efficiency
Highest power density
Lowest board space consumption
Minimal device paralleling required
System cost improvement
Environmentally friendly
Easy-to-design-in products
Target Applications:
Synchronous rectification for AC-DC SMPS
Motor control for 48V–110V systems
Isolated DC-DC converters
Lighting for 110V AC networks
HID lamps
Class D audio amplifiers
Uninterruptable power supplies (UPS)
LED lighting power supply
Related links
- Infineon BSC500N20NS3 G N-Channel MOSFET 200 V Enhancement, 8-Pin TDSON BSC500N20NS3GATMA1
- Infineon BSC050N04LS G N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON BSC050N04LSGATMA1
- Infineon BSC12DN20NS3 G N-Channel MOSFET 200 V Enhancement, 8-Pin TDSON BSC12DN20NS3GATMA1
- Infineon BSZ12DN20NS3 G N-Channel MOSFET 200 V Enhancement, 8-Pin PG-TSDSON-8
- Infineon BSZ12DN20NS3 G N-Channel MOSFET 200 V Enhancement, 8-Pin PG-TSDSON-8 BSZ12DN20NS3GATMA1
- Infineon ISC N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TDSON-8 ISC320N12LM6ATMA1
- Infineon OptiMOS N-Channel MOSFET & Diode 300 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON