Infineon BSZ12DN20NS3 G N-Channel MOSFET, 11.3 A, 200 V Enhancement, 8-Pin PG-TSDSON-8

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Subtotal (1 pack of 5 units)*

Kr. 339,20

(exc. VAT)

Kr. 424,00

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45Kr. 67,84Kr. 339,20
50 - 495Kr. 56,606Kr. 283,03
500 - 995Kr. 48,46Kr. 242,30
1000 - 2495Kr. 47,59Kr. 237,95
2500 +Kr. 46,698Kr. 233,49

*price indicative

RS Stock No.:
273-5250
Mfr. Part No.:
BSZ12DN20NS3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11.3A

Maximum Drain Source Voltage Vds

200V

Package Type

PG-TSDSON-8

Series

BSZ12DN20NS3 G

Mount Type

Surface

Pin Count

8

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6.5nC

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

50W

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Length

40mm

Height

1.5mm

Standards/Approvals

IEC61249-2-21, JEDEC1

Width

40mm

Automotive Standard

No

The Infineon MOSFET is a N channel power MOSFET. This MOSFET has an excellent gate charge. It is qualified according to JEDEC for target applications and 150 degree Celsius operating temperature. It is a optimized for dc to dc conversion.

Halogen free

RoHS compliant

Pb free lead plating

Very low on resistance

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