Infineon BSZ12DN20NS3 G Type N-Channel MOSFET, 11.3 A, 200 V Enhancement, 8-Pin PG-TSDSON-8

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Subtotal (1 pack of 5 units)*

Kr.60 88 

(exc. VAT)

Kr.76 10 

(inc. VAT)

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5 - 45Kr. 12,176Kr. 60,88
50 - 495Kr. 10,154Kr. 50,77
500 - 995Kr. 8,688Kr. 43,44
1000 - 2495Kr. 8,532Kr. 42,66
2500 +Kr. 8,376Kr. 41,88

*price indicative

RS Stock No.:
273-5250
Mfr. Part No.:
BSZ12DN20NS3GATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11.3A

Maximum Drain Source Voltage Vds

200V

Series

BSZ12DN20NS3 G

Package Type

PG-TSDSON-8

Mount Type

Surface

Pin Count

8

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

6.5nC

Maximum Power Dissipation Pd

50W

Maximum Operating Temperature

150°C

Length

40mm

Height

1.5mm

Width

40 mm

Standards/Approvals

IEC61249-2-21, JEDEC1

Automotive Standard

No

The Infineon MOSFET is a N channel power MOSFET. This MOSFET has an excellent gate charge. It is qualified according to JEDEC for target applications and 150 degree Celsius operating temperature. It is a optimized for dc to dc conversion.

Halogen free

RoHS compliant

Pb free lead plating

Very low on resistance

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