Infineon ISZ Type N-Channel MOSFET, 63 A, 100 V Enhancement, 8-Pin PG-TSDSON-8 ISZ113N10NM5LF2ATMA1
- RS Stock No.:
- 349-154
- Mfr. Part No.:
- ISZ113N10NM5LF2ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.118 19
(exc. VAT)
Kr.147 74
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 5 000 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 23,638 | Kr. 118,19 |
| 50 - 95 | Kr. 22,468 | Kr. 112,34 |
| 100 - 495 | Kr. 20,798 | Kr. 103,99 |
| 500 - 995 | Kr. 19,128 | Kr. 95,64 |
| 1000 + | Kr. 18,418 | Kr. 92,09 |
*price indicative
- RS Stock No.:
- 349-154
- Mfr. Part No.:
- ISZ113N10NM5LF2ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ISZ | |
| Package Type | PG-TSDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 100W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249‑2‑21, JEDEC, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ISZ | ||
Package Type PG-TSDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 100W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249‑2‑21, JEDEC, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS Linear FET is a revolutionary approach that solves the trade-off between on-state resistance and linear mode capability. Combined with the low cost, low profile PQFN 3.3x3.3 package, it is targeted for soft start and current limiting purpose in Power over Ethernet (PoE) application.
Wide safe operating area
Low RDS(on)
High max. pulse current
High max. continuous current
Available in small low profile package
Related links
- Infineon ISZ N-Channel MOSFET 200 V, 8-Pin PG-TDSON-8 ISZ520N20NM6ATMA1
- Infineon ISZ N-Channel MOSFET 135 V, 8-Pin PG-TDSON-8 ISZ143N13NM6ATMA1
- Infineon ISZ N-Channel MOSFET 30 V, 8-Pin PG-TSDSON-8 ISZ028N03LF2SATMA1
- Infineon ISZ N-Channel MOSFET 30 V, 8-Pin PG-TSDSON-8 ISZ033N03LF2SATMA1
- Infineon ISZ N-Channel MOSFET 30 V, 8-Pin PG-TSDSON-8 ISZ056N03LF2SATMA1
- Infineon OptiMOS 6 Power Transistor SiC N-Channel MOSFET 120 V, 8-Pin PG-TDSON-8 ISC104N12LM6ATMA1
- Infineon BSC N-Channel MOSFET 150 V, 8-Pin PG-TDSON-8 BSC105N15LS5ATMA1
- Infineon OptiMOSTM5 N-Channel MOSFET 60 V, 8-Pin PG-TDSON-8 FL ISC015N06NM5LF2ATMA1